Abstract
Abstract:
In this research, we rely on the base cell) MoS2/CZTS/CdS/i-ZnO/ZnO:AL ( which was designed and its outputs are ( Voc=1.1074V, Jsc=29.5356 mA / cm2, FF = 70.29%, =23.00% ).
In this study, Windows layers were tested using simulation programmed SCAPS-1D about layers (ZnO, SnO2, ZnO:AL), where ( ZnO:AL ) was selected as window layer, and it was found that the best thickness of the windows layer (0.1 μm). Also the different Buffer layers of the basic solar cell ( CdS, ZnO, ZnS, ZnSe, In2S3 ) were tested, where (ZnS) was selected as the )Buffer layer( where it was found that the best thickness was (0.12 μm).
After adopting both the window layers and Buffer layers, the modified cell became )MoS/CZTS/ZnS/i-ZnO/ZnO:AL( the thickness of the Absorption layer was tested, and it was found that the best thickness of the Absorption layer ( CZTS ) was ( 1.5µm ), then the cell output (Voc = 1.0596V, Jsc=28.1390 mA/cm2, FF= 88.41%, =26.37%).
Main Subjects