Abstract In this paper, a doped 3C-SiC with two dopant materials, Al and Cr to obtain p and n type semiconductors respectively, was used to as a basic component in the solar cell structure used in the current study. The present study examined the impact of the main environmental conditions (temperature and light) on the PIN 3C-SiC solar cell. Simulation was accomplished for different levels of illumination from (250 to 1200) W.m-2 and temperature from (300 to 400) k. SCAPS simulation software is used to evaluate the influence of temperature and light intensity, which directly affect the electrical properties of the cell. The results revealed that illumination has a great impact on the current of the circuit, where the current of the short circuit JSC increases linearly with increasing the level of intensity. On the other hand, it was proved that the temperature has a sever influence on the voltage of the cell. The voltage of the open circuit VOC considerably decreases due to the decrement in current of saturation that reduces directly with an increase in temperature.